10 single ended s08p 40.0 2.0 50.0 2.50 c/w 36 1.7 13.00 2.0 50 0.40 8.00 8.0 60 0.20 36 parameter symbol min typ max units test conditions common source power gain drain efficiency total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to source voltage gate to source voltage -65 c to 150 c c a v load mismatch tolerance vswr drain to gate voltage relative 0.40 0.20 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.40 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacitance idq = idq = 0.40 500 vgs = rdson saturation resistance forward transconductance gm vds = 10v, vgs = 5v polyfet rf devices 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:contact@polyfet.com url:www.polyfet. com 500 500 common source input capacitance 36 v igss vgs idsat zero bias drain current gate leakage current gate bias for drain current saturation current 25 ua v mho ohm amp parameter symbol min typ max units test conditions electrical characteristics ( each side ) rf characteristics ( 7.0 absolute maximum ratings ( t = gps 7.5 a, vds = v, f = a, vds = v, f = 7.5 7.5 watts v 1 mhz mhz mhz watts package style 7.0 vds = 0v vgs = 10v high efficiency, linear high gain, low noise general description 7.5 vds = a, vgs = vds ids = a ? db % o o o o o silicon gate enhancement mode rf power transistor ldmos vgs = 0v, f = 1 mhz 7.5 vds = vgs = 0v, f = 1 mhz 7.5 vds = vgs = 0v, f = 1 mhz 7.5 revision 02/25/2016 20 25 c ) watts output ) 150 polyfet rf devices L8711PR 10:1 rohs compliant silicon ldmos transistor designed specifically for broadband rf applications. suitable for military radios, cellular base staions, broadcast fm/am, mri, laser drivers and others. "polyfet" process features low feedback and output capacitances, resulting in high ft transistors with high input impedance and high efficiency. + v, ids = 20 v, vds = 10v vgs = 20 0 - v
l1c 1 die id, gm vs vg 1 10 100 02468101214 vgs in volts id g l1c 1di e capaci tance 1 10 100 1000 0 5 10 15 20 25 30 vds in volts coss ciss crss l8711p pin vs pout f=500 mhz; idq=.4;vds=7.5vdc 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 p in in wa tts 9 10 11 12 13 14 15 pout gain efficiency@7w =50% polyfet rf devices pout vs pin graph capacitance vs voltage id & gm vs vgs iv curve package dimensions in inches L8711PR l1c 1 die i v 0 2 4 6 8 10 12 14 16 0 2 4 6 8 101214161820 vds in volts id in amps vg=2v vg=4v vg=6v vg=8v vg=10v vg=12v 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:contact@polyfet.com url:www.polyfet. com revision 02/25/2016 tolerance .xx +/-0.01 .xxx +/-.005 inches
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